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| (R) STPS80150CW HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s s 2 x 40 A 150 V 175C 0.74 V A2 K s s s HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE HIGH FREQUENCY OPERATION A2 K A1 TO-247 DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, this devices is intended for use to enhance the reliability of the application. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 150C = 0.5 tp = 1s Per diode Per device Value 150 80 40 80 500 38200 - 65 to + 175 175 10000 Unit V A A A W C C V/s tp = 10 ms Sinusoidal Tj = 25C *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/4 October 2003 - Ed: 1A STPS80150CW THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Parameter Junction to case Junction to case Per diode Total Coupling Value 0.7 0.5 0.3 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C VR = VRRM IF = IF = IF = IF = 40 A 40 A 80 A 80 A Min. Typ. 5 6 0.8 0.68 0.9 0.8 Max. 30 20 0.84 0.74 0.96 0.86 Unit A mA V Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.62 x IF(AV) + 0.003 IF (RMS) Fig. 1: Conduction losses versus average current (per diode). PF(AV)(W) 40 35 30 25 20 15 Fig. 2: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 = 0.1 = 0.05 = 0.2 = 0.5 =1 0.1 0.01 10 5 0 0 5 10 15 20 25 30 35 40 T IF(AV)(A) =tp/T 45 tp 50 0.001 0.01 0.1 1 tp(s) 10 100 1000 Fig. 3: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.8 Fig. 4: Average forward current versus ambient temperature (=0.5, per diode). IF(AV)(A) 45 Rth(j-a)=Rth(j-c) 40 35 30 25 0.6 0.4 0.2 20 15 Rth(j-a)=15C/W 10 T Tj(C) 0 25 50 75 100 125 150 5 0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 2/6 STPS80150CW Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 500 450 400 350 300 250 200 150 100 50 0 1.E-03 1.E-02 1.E-01 1.E+00 IM t Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 Tc=50C 0.6 0.5 = 0.5 Tc=75C 0.4 0.3 = 0.2 Tc=125C 0.2 0.1 0.0 = 0.1 Single pulse T =0.5 t(s) tp(s) 1.E-02 1.E-01 =tp/T tp 1.E+00 1.E-03 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1.E+05 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25C 1.E+04 Tj=125C 1.E+03 Tj=100C Tj=75C 1.E+02 1000 Tj=50C 1.E+01 Tj=25C 1.E+00 VR(V) 1.E-01 10 30 50 70 90 110 130 150 VR(V) 100 1 10 100 1000 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) 100.0 Tj=125C (maximum values) Tj=125C (typical values) 10.0 Tj=25C (maximum values) 1.0 VFM(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 3/4 STPS80150CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Max. 5.15 2.60 0.80 1.40 Inches Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5 60 0.139 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5 V2 60 Dia. 3.55 2.40 3.40 15.75 20.15 4.30 14.80 3.00 3.65 s s s Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering type STPS80150CW s Marking STPS80150CW Package TO-247 Weight 4.4g Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 4/4 |
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